K9F1208U0M- Datasheet, PDF (9/41 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
Memory Map
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Figure 3. Memory Array Map
Plane 0
(1024 Block)
Block 0
Page 0
Page 1
Plane 1
(1024 Block)
Block 1
Page 0
Page 1
Plane 2
(1024 Block)
Block 2
Page 0
Page 1
Plane 3
(1024 Block)
Block 3
Page 0
Page 1
Page 30
Page 31
Block 4
Page 0
Page 1
Page 30
Page 31
Block 5
Page 0
Page 1
Page 30
Page 31
Block 6
Page 0
Page 1
Page 30
Page 31
Block 7
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 4088
Page 0
Page 1
Page 30
Page 31
Block 4092
Page 0
Page 1
Page 30
Page 31
Block 4089
Page 0
Page 1
Page 30
Page 31
Block 4093
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
528byte Page Registers
Block 4090
Page 0
Page 1
Page 30
Page 31
Block 4094
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
Block 4091
Page 0
Page 1
Page 30
Page 31
Block 4095
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
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