K9F1208U0M- Datasheet, PDF (1/41 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0, K9F1208U0M-YIB0
Document Title
64M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
Draft Date Remark
0.0
1. Initial issue
Oct. 27th 2000 Advanced
Information
0.1
1. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
Dec. 5th 2000
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
2. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
0.2
1. Changed GND input (pin # 6) pin to N.C ( No Connection).
- The pin # 6 is don’t-cared regardless of external logic input level
and is fixed as low internally.
Dec. 15th 2000
0.3
1. Changed plane address in Copy-Back Program
Jan. 8th 2001
- A24 and A25 must be the same between source and target page
=> A14 and A15 must be the same between source and target page
0.4
1. Changed DC characteristics
Apr. 7th 2001
Parameter
Min Typ
Max
Unit
Operating ^{Sequential Read}
-
Current Program
-
10
20->30
10
20->30
mA
Erase
-
10
20->30
2. Unified access timing parameter definition for multiple operating modes
- Changed AC characteristics (Before)
Parameter
Symbol
Min
Max Unit
ALE to RE Delay( ID read )
tAR1
100
-
CE to RE Delay( ID read)
tCR
100
-
RE Low to Status Output
tRSTO
-
35
ns
CE Low to Status Output
tCSTO
-
45
RE access time(Read ID)
tREADID
-
35
- AC characteristics (After)
. Deleted tCR,tRSTO, tCSTO and tREADID / Added tCEA
Parameter
Symbol
Min
ALE to RE Delay( ID read )
tAR1
10
CE Access Time
tCEA
-
Max Unit
-
ns
45
1