K9F1208U0M- Datasheet, PDF (11/41 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN
-0.6 to + 4.6
V
VCC
-0.6 to + 4.6
K9F1208U0M-YCB0
-10 to +125
Temperature Under Bias
TBIAS
°C
K9F1208U0M-YIB0
-40 to +125
Storage Temperature
TSTG
-65 to +150
°C
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Operating Conditions
(Voltage reference to GND, K9F1208U0M-YCB0 :TA=0 to 70°C, K9F1208U0M-YIB0:TA=-40 to 85°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
Dc and Operating Characteristics(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min Typ
Max
Unit
Operating
Current
Sequential Read
Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL, IOUT=0mA
-
-
-
10
-
10
-
10
30
30
mA
30
Stand-by Current(TTL)
ISB1 CE=VIH, WP= 0V/VCC
-
-
1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ISB2
ILI
ILO
CE=VCC-0.2, WP = 0V/VCC
VIN=0 to 3.6V
VOUT=0 to 3.6V
-
10
50
-
-
±10
µA
-
-
±10
Input High Voltage
VIH
-
2.0
-
VCC+0.3
Input Low Voltage, All inputs
Output High Voltage Level
VIL
-
VOH IOH=-400µA
-0.3
-
2.4
-
0.8
V
-
Output Low Voltage Level
VOL IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B) VOL=0.4V
8
10
-
mA
11