K4S281632D Datasheet, PDF (9/11 Pages) Samsung semiconductor – 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

K4S281632D
IBIS SPECIFICATION
IOH Characteristics (Pull-up)
100MHz 100MHz
Voltage
133MHz
133MHz
Min
Max
(V)
I (mA)
I (mA)
3.45
-2.4
3.3
-27.3
3.0
0.0
-74.1
2.6
-21.1
-129.2
2.4
-34.1
-153.3
2.0
-58.7
-197.0
1.8
-67.3
-226.2
1.65
-73.0
-248.0
1.5
-77.9
-269.7
1.4
-80.8
-284.3
1.0
-88.6
-344.5
0.0
-93.0
-502.4
66MHz
Min
I (mA)
-0.7
-7.5
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93.0
IOL Characteristics (Pull-down)
100MHz 100MHz
Voltage
133MHz
133MHz
Min
Max
(V)
I (mA)
I (mA)
0.0
0.0
0.0
0.4
27.5
70.2
0.65
41.8
107.5
0.85
51.6
133.8
1.0
58.0
151.2
1.4
70.7
187.7
1.5
72.9
194.4
1.65
75.4
202.5
1.8
77.0
208.6
1.95
77.6
212.0
3.0
80.3
219.6
3.45
81.4
222.6
66MHz
Min
I (mA)
0.0
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
CMOS SDRAM
66MHz and 100MHz/133MHz Pull-up
0 0.5 1 1.5 2 2.5 3 3.5
0
-100
-200
-300
-400
-500
-600
Voltage
IOH Min (100MHz/133MHz)
IOH Min (66MHz)
IOH Max (100MHz/133MHz)
66MHz and 100MHz/133MHz Pull-down
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Voltage
IOL Min (100MHz/133MHz)
IOL Min (66MHz)
IOL Max (100MHz/133MHz)
Rev. 0.1 Sept. 2001