DS_K7A803600B Datasheet, PDF (9/18 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Synchronous SRAM

K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Input Leakage Current(except ZZ)
IIL VDD = Max ; VIN=VSS to VDD
-2
Output Leakage Current
IOL Output Disabled, VOUT=VSS to VDDQ
-2
Operating Current
ICC
Device Selected, IOUT=0mA,
ZZ≤VIL , Cycle Time ≥ tCYC Min
-16 -
-14 -
Device deselected, IOUT=0mA, ZZ≤VIL, ^-16
-
ISB
f=Max, All Inputs≤0.2V or ≥ VDD-0.2V
-14
-
MAX
+2
+2
350
300
130
120
UNIT NOTES
µA
µA
mA 1,2
mA
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
ISB1
Device deselected, IOUT=0mA, ZZ≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
-
100
mA
ISB2
Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,
f=Max, All Inputs≤VIL or ≥VIH
-
60
mA
VOL IOL=8.0mA
-
0.4
V
VOH IOH=-4.0mA
2.4
-
V
VOL IOL=1.0mA
-
0.4
V
VOH IOH=-1.0mA
2.0
-
V
VIL
-0.3*
0.8
V
VIH
2.0 VDD+0.3** V
3
VIL
-0.3*
0.7
V
VIH
1.7 VDD+0.3** V
3
Notes : 1.The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
VIH
VSS
VSS-1.0V
20% tCYC(MIN)
TEST CONDITIONS
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70°C)
Parameter
Value
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
* The above parameters are also guaranteed at industrial temperature range.
-9-
Nov. 2003
Rev 3.0