DS_K7A803600B Datasheet, PDF (8/18 Pages) Samsung semiconductor – 256Kx36 & 512Kx18 Synchronous SRAM

K7A803600B
K7A801800B
256Kx36 & 512Kx18 Synchronous SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Voltage on Input Pin Relative to VSS
Voltage on I/O Pin Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Commercial
Industrial
SYMBOL
VDD
VDDQ
VIN
VIO
PD
TSTG
TOPR
TOPR
TBIAS
RATING
-0.3 to 4.6
VDD
-0.3 to VDD+0.3
-0.3 to VDDQ+0.3
1.6
-65 to 150
0 to 70
-40 to 85
-10 to 85
UNIT
V
V
V
V
W
°C
°C
°C
°C
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING CONDITIONS at 3.3V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
3.135
3.3
Ground
VSS
0
0
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
Supply Voltage
VDD
3.135
3.3
VDDQ
2.375
2.5
Ground
VSS
0
0
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
TEST CONDITION
MIN
CIN
VIN=0V
-
COUT
VOUT=0V
-
*Note : Sampled not 100% tested.
MAX
3.465
3.465
0
MAX
3.465
2.9
0
MAX
5
7
UNIT
V
V
V
UNIT
V
V
V
UNIT
pF
pF
-8-
Nov. 2003
Rev 3.0