K4M56323PG-F Datasheet, PDF (8/12 Pages) Samsung semiconductor – 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M56323PG-F(H)E/G/C/F
Mobile-SDRAM
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
Parameter
Symbol
-75
Min Max
-90
Min Max
CAS latency=3 tCC
7.5
9
CLK cycle time
CAS latency=2 tCC
12
1000
12
1000
CAS latency=1 tCC
-
-
CAS latency=3 tSAC
6
7
CLK to valid output delay CAS latency=2 tSAC
9
9
CAS latency=1 tSAC
-
-
CAS latency=3 tOH
2.5
2.5
Output data hold time
CAS latency=2 tOH
2.5
2.5
CAS latency=1 tOH
-
-
CLK high pulse width
tCH
2.5
3.0
CLK low pulse width
tCL
2.5
3.0
Input setup time
tSS
2.0
2.0
Input hold time
tSH
1.0
1.0
CLK to output in Low-Z
tSLZ
1
1
CAS latency=3
6
7
CLK to output in Hi-Z
CAS latency=2 tSHZ
9
9
CAS latency=1
-
-
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
-1L
Min Max
9
15
1000
25
7
10
20
2.5
2.5
2.5
3.0
3.0
2.0
1.0
1
7
10
20
Unit Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
January 2006