K4M56323PG-F Datasheet, PDF (5/12 Pages) Samsung semiconductor – 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M56323PG-F(H)E/G/C/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
65
65
65 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
10
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
80
70
70 mA 1
Refresh Current
Self Refresh Current
ICC5 tARFC ≥ tARFC(min)
ICC6 CKE ≤ 0.2V
140 140 140 mA 2
Internal TCSR
Full Array
45 ^*4
200
85/70
°C
3
450
-E/C 1/2 Array
160
300
5
1/4 Array
140
Full Array
150
250
uA
300
-G/F 1/2 Array
135
250
6
1/4 Array
130
225
Deep Power Down Current
ICC8 CKE ≤ 0.2V
10
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In comercial Temp : 45°C/Max 70°C. In extended Temp : 45°C/Max 85°C.
4. It has +/-5 °C tolerance.
5. K4M56323PG-F(H)E/C^**
6. K4M56323PG-F(H)G/F^**
7. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.
Please contact Samsung for more information.
8. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
uA 7
January 2006