K4M56323PG-F Datasheet, PDF (6/12 Pages) Samsung semiconductor – 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M56323PG-F(H)E/G/C/F
Mobile-SDRAM
AC OPERATING TEST CONDITIONS(VDD = 1.7 ~ 1.95 V, TA = -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x VDDQ / 0.2
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Figure 2
Output
10.6KΩ
VDDQ
13.9KΩ
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
20pF
Output
Figure 1. DC Output Load Circuit
Z0=50Ω
Vtt=0.5 x VDDQ
50Ω
20pF
Figure 2. AC Output Load Circuit
January 2006