M366S1623DT0 Datasheet, PDF (7/9 Pages) Samsung semiconductor – PC100 Unbuffered DIMM

M366S1623DT0
PC100 Unbuffered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
CLK cycle time
CAS latency=3
CAS latency=2
CLK to valid
output delay
CAS latency=3
CAS latency=2
Output data
hold time
CAS latency=3
CAS latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
-80
Min Max
8
1000
-
6
-
3
-
3
3
2
1
1
6
-
-1H
Min Max
10
1000
10
6
6
3
3
3
3
2
1
1
6
6
-1L
Min Max
10
1000
12
6
7
3
3
3
3
2
1
1
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1,2
2
3
3
3
3
2
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Rev. 0.0 Jun. 1999