M366S1623DT0 Datasheet, PDF (4/9 Pages) Samsung semiconductor – PC100 Unbuffered DIMM

M366S1623DT0
PC100 Unbuffered DIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
16
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
Input logic low voltage
VIL
-0.3
0
0.8
V
Output logic high voltage
VOH
2.4
-
-
V
Output logic low voltage
VOL
-
-
0.4
V
Input leakage current
ILI
-10
-
10
uA
Note : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Pin
Symbol
Min
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0~CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
CADD
45
CIN
45
CCKE
25
CCLK
15
CCS
15
CDQM
10
COUT
13
Max
85
85
45
21
25
15
18
Unit
pF
pF
pF
pF
pF
pF
pF
Rev. 0.0 Jun. 1999