M366S1623DT0 Datasheet, PDF (5/9 Pages) Samsung semiconductor – PC100 Unbuffered DIMM

M366S1623DT0
PC100 Unbuffered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(one Bank Active)
Symbol
Test Condition
Burst length =1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Version
-80
-1H
-1L
Unit Note
800
760
760 mA 1
Precharge standby current in
power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
16
mA
16
Precharge standby current in
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
240
non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
96
mA
Active standby current in
power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
48
mA
48
Active standby current in
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
400
mA
non power-down mode
(One bank active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
240
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4 ^{Page burst}
4Banks activated
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
1,080 960
960 mA 1
1,240 1,200 1,200 mA 2
16
mA
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Rev. 0.0 Jun. 1999