K4F170411D Datasheet, PDF (7/20 Pages) Samsung semiconductor – 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

K4F170411D, K4F160411D
K4F170412D, K4F160412D
TEST MODE CYCLE
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column address to RAS lead time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
Fast Page cycle time
Fast Page read-modify-write cycle time
RAS pulse width (Fast Page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
Symbol
tRC
tRWC
tRAC
tCAC
tAA
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tCPWD
tPC
tPRWC
tRASP
tCPA
tOEA
tOED
tOEH
-50
Min
Max
95
138
55
18
30
55
10K
18
10K
18
55
30
41
78
53
58
40
81
55
200K
35
18
18
18
CMOS DRAM
-60
Min
Max
115
160
65
20
35
65
10K
20
10K
20
65
35
45
90
60
65
45
90
65
200K
40
20
20
20
( Note 11 )
Units Notes
ns
ns
ns 3,4,10,12
ns
3,4,5,12
ns
3,10,12
ns
ns
ns
ns
ns
ns
7
ns
7
ns
7
ns
ns
ns
ns
ns
3
ns
ns
ns