K4F170411D Datasheet, PDF (4/20 Pages) Samsung semiconductor – 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

K4F170411D, K4F160411D
K4F170412D, K4F160412D
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICCS
Power
Don′t care
Normal
L
Don′t care
Don′t care
Normal
L
Don′t care
L
L
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
K4F170412D
90
80
1
1
90
80
80
70
0.5
200
90
80
250
200
Max
K4F160412D
K4F170411D
110
90
100
80
1
2
1
1
110
90
100
80
90
80
80
70
0.5
1
200
250
110
90
100
80
250
300
200
250
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
CMOS DRAM
K4F160411D
110
100
2
1
110
100
90
80
1
250
110
100
300
250
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
*Note : _{ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.}
ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.