K4F170411D Datasheet, PDF (2/20 Pages) Samsung semiconductor – 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

K4F170411D, K4F160411D
K4F170412D, K4F160412D
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4F17(6)0411(2)D-B
VCC 1
DQ0 2
DQ1 3
W4
RAS 5
*A11(N.C) 6
A10 7
A0 8
A1 9
A2 10
A3 11
VCC 12
24 VSS
23 DQ3
22 DQ2
21 CAS
20 OE
19 A9
18 A8
17 A7
16 A6
15 A5
14 A4
13 VSS
• K4F17(6)0411(2)D-F
VCC 1
DQ0 2
DQ1 3
W4
RAS 5
*A11(N.C) 6
A10 7
A0 8
A1 9
A2 10
A3 11
VCC 12
24 VSS
23 DQ3
22 DQ2
21 CAS
20 OE
19 A9
18 A8
17 A7
16 A6
15 A5
14 A4
13 VSS
*A11 is N.C for K4F160411(2)D(5V/3.3V, 2K Ref. product)
B : 300mil 26(24) SOJ
F : 300mil 26(24) TSOP II
Pin Name
A0 - A11
A0 - A10
DQ0 - 3
VSS
RAS
CAS
W
OE
VCC
N.C
Pin Function
Address Inputs (4K Product)
Address Inputs (2K Product)
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5V)
Power(+3.3V)
No Connection (2K Ref. product)