K64004C1D Datasheet, PDF (6/9 Pages) Samsung semiconductor – 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4004C1D
WRITE CYCLE*
Parameter
Symbol
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
tOW
K6R4004C1D-10
Min
Max
10
-
7
-
0
-
7
-
7
-
10
-
0
-
0
5
5
-
0
-
3
-
* The above parameters are also guaranteed at industrial temperature range.
PRELIMINARY
CMOS SRAM
K6R4004C1D-12
Min
Max
12
-
8
-
0
-
8
-
8
-
12
-
0
-
0
6
6
-
0
-
3
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tRC
tAA
tOH
Previous Valid Data
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
tRC
tAA
tCO
tHZ(3,4,5)
OE
Data out
VCC
Current
tOHZ
tOE
High-Z
tOLZ
tLZ(4,5)
tDH
Valid Data
tPU
ICC
ISB
50%
tPD
50%
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL
levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
-6-
Rev 1.0
July 2002