K64004C1D Datasheet, PDF (5/9 Pages) Samsung semiconductor – 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4004C1D
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
RL = 50Ω
VL = 1.5V
30pF*
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
Min
Read Cycle Time
tRC
10
Address Access Time
tAA
-
Chip Select to Output
tCO
-
Output Enable to Valid Output
tOE
-
Chip Enable to Low-Z Output
tLZ
3
Output Enable to Low-Z Output
tOLZ
0
Chip Disable to High-Z Output
tHZ
0
Output Disable to High-Z Output
tOHZ
0
Output Hold from Address Change
tOH
3
Chip Selection to Power Up Time
tPU
0
Chip Selection to Power DownTime tPD
-
* The above parameters are also guaranteed at industrial temperature range.
K6R4004C1D-10
Max
-
10
10
5
-
-
5
5
-
-
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Rev 1.0
July 2002