K64004C1D Datasheet, PDF (4/9 Pages) Samsung semiconductor – 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4004C1D
PRELIMINARY
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
TA
Rating
-0.5 to VCC+0.5
-0.5 to 7.0
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
VCC
4.5
5.0
VSS
0
0
VIH
2.2
-
VIL
-0.5*
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
Max
5.5
0
VCC+0.5**
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
10ns
10ns
Min Max Unit
-2
2
µA
-2
2
µA
-
65
mA
-
75
Standby Current
Output Low Voltage Level
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
VOL
IOL=8mA
-
20
mA
-
5
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
Test Conditions
MIN
CI/O
VI/O=0V
-
CIN
VIN=0V
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
-4-
Rev 1.0
July 2002