K1S6416BCC Datasheet, PDF (6/10 Pages) Samsung semiconductor – 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S6416BCC
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to VCCQ-0.2V
Input rising and falling time: 3ns
Input and output reference voltage: 0.5 x VCCQ
Output load (See right): CL=30pF
AC CHARACTERISTICS (Vcc=VCCQ=1.7~2.0V, TA=-40 to 85°C)
Parameter List
Common
Read
Write
CS High Pulse Width
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Page Cycle
Page Access Time
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write Pulse Width
WE High Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. tWP(min)=70ns for continuous write operation over 50 times.
Symbol
tCSHP
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tPC
tPA
tWC
tCW
tAS
tAW
tBW
tWP
tWHP
tWR
tWHZ
tDW
tDH
tOW
AC Output Load Circuit
Dout
Z0=50Ω
UtRAM
Vt=0.5 x VCCQ
50Ω
30pF
Speed Bins
70ns
Min
Max
10
-
-
70
-
70
-
35
-
70
10
-
10
-
5
-
0
25
0
25
0
25
3
-
25
-
-
20
70
-
60
-
0
-
60
-
60
-
55¹⁾
-
5
-
0
-
0
25
30
-
0
-
5
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-6-
Revision 1.0
April 2005