K1S6416BCC Datasheet, PDF (2/10 Pages) Samsung semiconductor – 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S6416BCC
UtRAM
4M x 16 bit Page Mode Uni-Transistor CMOS RAM
FEATURES
• Process Technology: CMOS
• Organization: 4M x16 bit
• Power Supply Voltage: 1.7~2.0V
• Three State Outputs
• Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: TBD
GENERAL DESCRIPTION
The K1S6416BCC is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports 4 page read operation and Industrial temperature
range. The device supports dual chip selection for user inter-
face. The device also supports internal Temperature Compen-
sated Self Refresh mode for the standby power saving at room
temperature range.
PRODUCT FAMILY
Product Family Operating Temp. Vcc Range
K1S6416BCC-I Industrial(-40~85°C) 1.7~2.0V
Speed
(tRC)
70ns
Power Dissipation
Standby
(ISB1, Max.)
Operating
(ICC2, Max.)
120µA(< 40°C)
180µA(< 85°C)
40mA
PKG Type
TBD
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
VCC
VCCQ
VSS
TBD
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
CS1
CS2
OE
Control Logic
WE
UB
LB
Name
Function
Name
Function
CS1,CS2 Chip Select Inputs Vcc/VCCQ²⁾ Power Supply(core / I/O)
OE Output Enable Input Vss Ground
WE Write Enable Input
UB
Upper Byte(I/O9~16)
A0~A21 Address Inputs
LB
Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs
NC
No Connection¹⁾
1) Reserved for future use
2) VCC and VCCQ should be the same level
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
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Revision 1.0
April 2005