K1S6416BCC Datasheet, PDF (5/10 Pages) Samsung semiconductor – 4Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S6416BCC
UtRAM
PRODUCT LIST
Part Name
K1S6416BCC
Industrial Temperature Product(-40~85°C)
Function
70ns, 1.85V
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCCQ+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
0.8 x VCCQ
-0.2³⁾
Typ
1.85
0
-
-
Max
2.0
0
VCCQ+0.2²⁾
0.4
Unit
V
V
V
V
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to VCCQ
Output leakage current
ILO ^{CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,}
VIO=Vss to VCCQ
Average operating current ICC2 ^{Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS1=VIL,}
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIH or VIL
Output low voltage
VOL IOL=0.1mA
Output high voltage
VOH IOH=-0.1mA
Standby Current(CMOS)
ISB1¹⁾
Other inputs=0~VCCQ
1) CS1≥VCCQ-0.2V, CS2≥VCCQ-0.2V(CS1
controlled) or
2) 0V ≤ CS2 ≤ 0.2V(CS2 controlled)
1. Standby mode is supposed to be set up after at least one active operation.after power up.
ISB1 is measured after 60ms from the time when standby mode is set up.
< 40°C
< 85°C
Min Typ Max Unit
-1
-
1 µA
-1
-
1 µA
-
-
40 mA
-
-
0.2
V
1.4
-
-
V
-
- 120 µA
-
- 180 µA
-5-
Revision 1.0
April 2005