K1S3216BCD Datasheet, PDF (6/10 Pages) Samsung semiconductor – 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD
UtRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage: 0.5 x VCC
Output load (See right): CL=50pF
Dout
CL
1. Including scope and jig capacitance
AC CHARACTERISTICS (Vcc=1.7~2.0V, TA=-40 to 85°C)
Parameter List
Symbol
70ns
Speed Bins
85ns
Min
Max
Min
Max
Common CS High Pulse Width
tCSHP
10
-
10
-
Read Cycle Time
tRC
70
-
85
-
Address Access Time
tAA
-
70
-
85
Chip Select to Output
tCO
-
70
-
85
Output Enable to Valid Output
tOE
-
35
-
40
UB, LB Access Time
tBA
-
70
-
85
Chip Select to Low-Z Output
tLZ
10
-
10
-
Read
UB, LB Enable to Low-Z Output
tBLZ
10
-
10
-
Output Enable to Low-Z Output
tOLZ
5
-
5
-
Chip Disable to High-Z Output
tHZ
0
25
0
25
UB, LB Disable to High-Z Output
tBHZ
0
25
0
25
Output Disable to High-Z Output
tOHZ
0
25
0
25
Output Hold from Address Change
tOH
3
-
3
-
Page Cycle
tPC
25
-
25
-
Page Access Time
tPA
-
20
-
20
Write Cycle Time
tWC
70
-
85
-
Chip Select to End of Write
tCW
60
-
70
-
Address Set-up Time
tAS
0
-
0
-
Address Valid to End of Write
tAW
60
-
70
-
Write
UB, LB Valid to End of Write
Write Pulse Width
tBW
60
-
70
-
tWP
55¹⁾
-
60¹⁾
-
Write Recovery Time
tWR
0
-
0
-
Write to Output High-Z
tWHZ
0
25
0
25
Data to Write Time Overlap
tDW
30
-
35
-
Data Hold from Write Time
tDH
0
-
0
-
End Write to Output Low-Z
tOW
5
-
5
-
1. tWP(min)=70ns or tWC(min)=90ns for continuous write operation over 50 times.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-6-
Revision 1.0
April 2005