K1S3216BCD Datasheet, PDF (5/10 Pages) Samsung semiconductor – 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD
UtRAM
PRODUCT LIST
Part Name
K1S3216BCD-FI70
K1S3216BCD-FI85
Industrial Temperature Product(-40~85°C)
Function
48-FBGA, 70ns, 1.8V
48-FBGA, 85ns, 1.8V
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤3ns.
3. Undershoot: -1.0V in case of pulse width ≤3ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.2³⁾
Typ
1.85
0
-
-
Max
2.0
0
Vcc+0.3²⁾
0.4
Unit
V
V
V
V
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO ^{CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH}
,VIO=Vss to Vcc
Cycle time=1µs, 100% duty, IIO=0mA, CS1≤0.2V,
ICC1 LB≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or
Average operating current
VIN≥VCC-0.2V
ICC2 ^{Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,}
LB=VIL or/and UB=VIL,VIN=VIL or VIH
Output low voltage
Output high voltage
Standby Current(CMOS)
VOL
VOH
ISB1²⁾
IOL=0.1mA
IOH=-0.1mA
Other inputs = 0~Vcc
1) CS1≥Vcc-0.2V, CS2≤Vcc-0.2V (CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
1. Typical values are tested at VCC=1.8V, TA=25°C and not guaranteed.
2. ISB1 is measured after 60ms from the time when standby mode is set up.
Min Typ¹⁾ Max Unit
-1
-
1 µA
-1
-
1 µA
-
-
5 mA
-
35 mA
-
-
0.2
V
1.4
-
-
V
-
- 100 µA
-5-
Revision 1.0
April 2005