K1S3216BCD Datasheet, PDF (2/10 Pages) Samsung semiconductor – 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD
UtRAM
2M x 16 bit Page Mode Uni-Transistor CMOS RAM
FEATURES
• Process Technology: CMOS
• Organization: 2M x16 bit
• Power Supply Voltage: 1.7~2.0V
• Three State Outputs
• Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: 48-FBGA-6.00x8.00
GENERAL DESCRIPTION
The K1S3216BCD is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
support 4 page mode operation, Industrial temperature range
and 48 ball Chip Scale Package for user flexibility of system
design. The device also supports deep power down mode for
low standby current.
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(tRC)
K1S3216BCD-I Industrial(-40~85°C) 1.7~2.0V 70/85ns
Power Dissipation
Standby
(ISB1, Max.)
Operating
(ICC2, Max.)
100µA
35mA
PKG Type
48-FBGA-6.00x8.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2 CS2
B
I/O9 UB
A3
A4 CS1 I/O1
C
I/O10 I/O11 A5
A6 I/O2 I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Addresses
Row
select
Memory array
D
Vss I/O12 A17 A7 I/O4 Vcc
E
Vcc I/O13 DNU A16 I/O5 Vss
F
I/O15 I/O14 A14 A15 I/O6 I/O7
G
I/O16 A19 A12 A13 WE I/O8
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
H
A18 A8
A9 A10 A11 A20
48-FBGA: Top View(Ball Down)
Name
Function
Name
Function
CS1
CS2
OE
Control Logic
WE
UB
LB
CS1,CS2 Chip Select Inputs
Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input
UB Upper Byte(I/O9~16)
A0~A20 Address Inputs
LB Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs DNU Do Not Use¹⁾
1) Reserved for future use
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2-
Revision 1.0
April 2005