DS_M390S2858CT1 Datasheet, PDF (6/12 Pages) Samsung semiconductor – SDRAM DIMM

M390S2858CT1
PC133 Registered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Burst length =1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0mA
ICC4 ^{Page Burst}
4 Banks activated
tCCD=2CLK
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
4. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Version
-7C
-7A
2840
2660
422
74
1070
362
566
218
1430
902
3020
3020
5000
4640
458
Unit Note
mA 1
mA 3
mA 3
mA 3
mA 3
mA 3
mA 1
mA 2
mA 3
REV. 0.1 Sept. 2001