K8P2716UZC Datasheet, PDF (5/56 Pages) Samsung semiconductor – 128Mb C-die Page NOR Flash

K8P2716UZC
Rev. 1.0
datasheet NOR FLASH MEMORY
128M Bit (8M x16, 16Mb x8) Page Mode / Page NOR Flash Memory
1.0 FEATURES
2.0 GENERAL DESCRIPTION
• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization
8M x16 bit (Word mode)
16M x 8 bit (Byte mode)
• Fast Read Access Time : 65ns
• Page Mode Operation
8 Words Page access allows fast asychronous read
Page Read Access Time : 25ns
• Uniform block architectures
64Kword x 128 (Uniform)
• OTP Block : Extra 256 word
- 128word for factory and 128word for customer OTP
• Power Consumption (typical value)
- Active Read Current : 30mA (@5MHz)
- Program/Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 20uA
• Support Single & 32word Buffer Program
• WP/ACC input pin
- Allows special protection of first or last block of flash array at VIL,
regardless of block protect status
- Removes special protection at VIH, the first or last block of flash array
return to normal block protect status
- Reduce program time at VHH : 6us/word at Write Buffer
• Erase Suspend/Resume
• Program Suspend/Resume
• Unlock Bypass Mode
• Hardware RESET Pin
• Command Register Operation
• Supports Common Flash Memory Interface
• Industrial Temperature : -40°C to 85°C
• Extended Temperature : -25°C to 85°C
• Endurance : 100Kcycle
• V_IO options at 1.8V and 3V I/O
• Package options
- 56 Pin TSOP (20x14mm)
- 64 Ball FBGA (11x13, 1.0mm Ball Pitch)
The K8P2716UZB featuring single 3.0V power supply, is an 128Mbit NOR-
type Flash Memory organized as 16M x 8 or 8M x16. The memory architec-
ture of the device is designed to divide its memory arrays into 128 blocks
with independent hardware protection. This block architecture provides
highly flexible erase and program capability. The K8P2716UZB NOR Flash
consists of uniform block.
The K8P2716UZB offers fast page access time of 25ns with random access
time of 65ns. The device′s fast access times allow high speed microproces-
sors to operate without wait states. The device performs a program opera-
tion in unit of 16 bits (Word) and erases in units of a block. Single or multiple
blocks can be erased. The block erase operation is completed within typi-
cally 0.7 sec. The device requires 25mA as program/erase current in the
commercial and extended temperature ranges.
The K8P2716UZB NOR Flash Memory is created by using Samsung's
advanced CMOS process technology. This device is available in 64FBGA
and 56 Pin TSOP. The device is compatible with EPROM applications to
require high-density and cost-effective nonvolatile read/write storage solu-
tions.
-5-