K8P2716UZC Datasheet, PDF (28/56 Pages) Samsung semiconductor – 128Mb C-die Page NOR Flash

K8P2716UZC
Rev. 1.0
datasheet NOR FLASH MEMORY
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write
Enter Lock Register Command:
Address 555h, Data 40h
Program Lock Register Data
Address XXXh, Data A0h
Address 00h, Data PD
XXXh = Address don’t care
Program Data (PD): See text for Lock Register definitions
Caution: Lock data may only be progammed once.
Wait 4us
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Yes
Done?
No
DQ5=1?
Yes
No
Error condition (Exceeded Timing Limits)
PASS. Write Lock Register
Exit Command:
Address XXXh, Data 90h
Address XXXh, Data 00h
Device returns to reading array.
FAIL. Write rest command
to return to reading array.
Figure 9: Lock Register Program Algorithm
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