K8P2716UZC Datasheet, PDF (45/56 Pages) Samsung semiconductor – 128Mb C-die Page NOR Flash

K8P2716UZC
Rev. 1.0
datasheet NOR FLASH MEMORY
21.0 ERASE AND PROGRAM PERFORMANCE
Parameter
Limits
Condition
Unit
Min
Typ
Max
Comments
Block Erase Time
64 Kword
V_CC
-
0.7
3.5
sec
Includes 00H programming
prior to erasure
Chip Erase Time
V_CC
-
89.6
sec
Includes 00H programming
prior to erasure
Word Programming Time
V_CC
-
6
100
µs
Excludes system-level overhead
ACC
6
100
Word Programming time with 32-
words Buffer
V_CC
ACC
-
3
30
µs
Excludes system-level overhead
3
30
Total 32-words Buffer Programming
Time
V_CC
ACC
-
96
960
µs
Excludes system-level overhead
96
960
Chip Programming Time with 32-
word Buffer
V_CC
-
26
260
sec
Excludes system-level overhead
NOTE :
1) 25 °C, VCC = 3.0V 100,000 cycles, Typical (Checkerboard pattern), All values are subject to change.
2) System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each word.
In the preprogramming step of the Internal Erase Routine, all words are programmed to 00H before erasure.
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