K4S56163LC Datasheet, PDF (5/8 Pages) Samsung semiconductor – 16Mx16 Mobile SDRAM 54CSP

K4S56163LC-R(B)F/R
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 70°C)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Version
Unit Note
-75 -1H -1L -15
75 70 65 60 mA 1
Precharge Standby Current
in power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
mA
0.5
Precharge Standby Current
in non power-down mode
IC C 2 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
I C C 2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
15
10
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
6
mA
6
Active Standby Current
IC C 3 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
I C C 3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
25
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
115 95 95 85 mA 1
Refresh Current
ICC5 tRC ≥ tR C(min)
Self Refresh Current
ICC6 CKE ≤ 0.2V
165 155 150 125 mA 2
TCSR Range
Max 45°C Max 70°C °C
4 Banks
500
750
-R(B)F _{2 Banks}
400
550
3
1 Bank
350
4 Banks
360
420
uA
630
-R(B)R 2 Banks
260
430
4
1 Bank
200
300
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S56163LC-R(B)F**
4. K4S56163LC-R(B)R**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 1.4 Dec. 2002