K4S56163LC Datasheet, PDF (4/8 Pages) Samsung semiconductor – 16Mx16 Mobile SDRAM 54CSP

K4S56163LC-R(B)F/R
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN , VOUT
-1.0 ~ 3.6
Voltage on VDD supply relative to Vss
VD D, VDDQ
-1.0 ~ 3.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1
Short circuit current
IO S
50
Notes :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 70 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VD D
2.3
2.5
2.7
V
VDDQ
1.65
-
2.7
V
Input logic high voltage
VI H
0.8 x V DDQ
-
VDDQ + 0.3
V
Input logic low voltage
VIL
-0.3
0
0.3
V
Output logic high voltage
VO H
VDDQ -0.2
-
-
V
Output logic low voltage
VOL
-
-
0.2
V
Input leakage current
IL I
-10
-
10
uA
Notes :
1. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VD D = 2.5V, TA = 23 °C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
D Q0 ~ D Q15
Symbol
Min
CCLK
2.0
CIN
2.0
CADD
2.0
COUT
3.5
Max
4.0
4.0
4.0
6.0
Unit
pF
pF
pF
pF
Unit
V
V
°C
W
mA
Note
1
2
IOH = -0.1mA
IOL = 0.1mA
3
Note
Rev. 1.4 Dec. 2002