K4M563233D Datasheet, PDF (5/8 Pages) Samsung semiconductor – 8Mx32 Mobile SDRAM 90FBGA

K4M563233D-M(E)E/N/I/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 85 °C for Extended, -40 °C to 85°C for Industrial)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tR C(min)
IO = 0 mA
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2 P CKE ≤ VIL (max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL (max), tCC = ∞
I CC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3 P CKE ≤ VIL (max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL (max), tCC = ∞
I CC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
IO = 0 mA
ICC4 ^{Page burst}
4Banks Activated
tCCD = 2CLKs
ICC5 tRC ≥ tR C(min)
ICC6 CKE ≤ 0.2V
-M(E)E/I
-M(E)N/P
Version
-80
-1H
-1L
Unit Note
150
150
140 mA
1
1.2
mA
1.2
20
mA
10
8
mA
8
45
mA
40
mA
190
160
160 mA
1
320
300
290 mA
2
3
mA
3
1000
uA
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4M563233D-M(E)E/I**
4. K4M563233D-M(E)N/P**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 1.1 Dec. 2002