K4M563233D Datasheet, PDF (4/8 Pages) Samsung semiconductor – 8Mx32 Mobile SDRAM 90FBGA

K4M563233D-M(E)E/N/I/P
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VD D supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VI N, VO U T
VDD , VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°C
W
mA
Notes :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 °C to 85 °C for Extended, -40°C to 85°C for Industrial)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VD D
VDDQ
VI H
VIL
VO H
VOL
IL I
Min
2.7
2.7
2.2
-0.3
2.4
-
-10
Typ
Max
Unit
3.0
3.6
V
3.0
3.6
V
3.0
VDDQ+0.3
V
0
0.5
V
-
-
V
-
0.4
V
-
10
uA
Note
1
2
IOH = -2mA
IOL = 2mA
3
Notes :
1. VIH (max) = 5.3V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 3.0V & 3.3V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE
DQM
Address
D Q0 ~ D Q31
Symbol
Min
CCLK
3.0
CIN
3.0
CIN
1.5
CADD
3.0
COUT
3.0
Max
9.0
9.0
4.5
9.0
6.5
Unit
pF
pF
pF
pF
pF
Note
Rev. 1.1 Dec. 2002