K4E661611D Datasheet, PDF (5/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661611D, K4E641611D
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=5.0V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A12]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
Max
Units
5
pF
7
pF
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=5.0V±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-50
Min
Max
Random read or write cycle time
tRC
84
Read-modify-write cycle time
Access time from RAS
tRWC
tRAC
116
50
Access time from CAS
tCAC
13
Access time from column address
tAA
CAS to output in Low-Z
tCLZ
Output buffer turn-off delay from CAS
tCEZ
25
3
3
13
OE to output in Low-Z
tOLZ
3
Transition time (rise and fall)
RAS precharge time
tT
1
50
tRP
30
RAS pulse width
tRAS
50
10K
RAS hold time
CAS hold time
CAS pulse width
tRSH
tCSH
tCAS
13
38
8
10K
RAS to CAS delay time
tRCD
20
37
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
tRAD
tCRP
tASR
15
25
5
0
Row address hold time
tRAH
10
Column address set-up time
Column address hold time
Column address to RAS lead time
tASC
0
tCAH
8
tRAL
25
Read command set-up time
tRCS
0
Read command hold time referenced to CAS tRCH
0
Read command hold time referenced to RAS tRRH
0
Write command hold time
tWCH
10
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
tWP
10
tRWL
13
tCWL
8
tDS
0
-60
Min
Max
104
138
60
15
30
3
3
13
3
1
50
40
60
10K
15
45
10
10K
20
45
15
30
5
0
10
0
10
30
0
0
0
10
10
15
10
0
Units
Note
ns
ns
ns
3,4,10
ns
3,4,5
ns
3,10
ns
3
ns
6,21
ns
3
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
ns
13
ns
13
ns
ns
8
ns
8
ns
ns
ns
ns
16
ns
9,19