K4E661611D Datasheet, PDF (4/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661611D, K4E641611D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
K4E661611D
Max
ICC1
Don′t care
-50
-60
90
80
ICC2
Normal
Don′t care
2
ICC3
Don′t care
-50
-60
90
80
ICC4
Don′t care
-50
-60
100
90
ICC5
Normal
Don′t care
1
ICC6
Don′t care
-50
-60
120
110
K4E641611D
120
110
2
120
110
110
100
1
120
110
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
*Note : _{ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.}
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time tHPC.