K4E661611D Datasheet, PDF (1/36 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E661611D, K4E641611D
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this
family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM
family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E661611D-TC(5.0V, 8K Ref.)
- K4E641611D-TC(5.0V, 4K Ref.)
• Active Power Dissipation
Speed
8K
-50
495
-60
440
Unit : mW
4K
660
605
• Refresh Cycles
Part
Refresh
NO.
cycle
K4E661611D*
8K
K4E641611D
4K
Refresh time
Normal
64ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
• Performance Range
Speed tRAC
tCAC
-50
50ns 13ns
-60
60ns 15ns
tRC
84ns
104ns
tHPC
20ns
25ns
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.