DS_K6F1016U4C Datasheet, PDF (5/9 Pages) Samsung semiconductor – 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1016U4C Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS (Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): CL= 100pF+1TTL
CL=30pF+1TTL
VTM³⁾
R1²⁾
CL¹⁾
R2²⁾
1. Including scope and jig capacitance
2. R1=3070Ω, R2=3150Ω
3. VTM =2.8V
AC CHARACTERISTICS (Vcc=2.7~3.3V, Industrial product:TA=-40 to 85°C)
Parameter List
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Read ^{Chip Select to Low-Z Output}
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write _{Write Pulse Width}
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. The parameter is measured with 30pF test load.
DATA RETENTION CHARACTERISTICS
tRC
tAA
tCO
tOE
tBA
tLZ
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
Speed Bins
55ns¹⁾
70ns
Min
Max
Min
Max
55
-
70
-
-
55
-
70
-
55
-
70
-
25
-
35
-
55
-
70
10
-
10
-
10
-
10
-
5
-
5
-
0
20
0
25
0
20
0
25
0
20
0
25
10
-
10
-
55
-
70
-
45
-
60
-
0
-
0
-
45
-
60
-
45
-
60
-
40
-
50
-
0
-
0
-
0
20
0
20
25
-
30
-
0
-
0
-
5
-
5
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Item
Symbol
Test Condition
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
IDR
tSDR
tRDR
CS≥Vcc-0.2V¹⁾, VIN≥0V
Vcc=1.5V, CS≥Vcc-0.2V¹⁾, VIN≥0
See data retention waveform
1. 1) CS≥Vcc-0.2V(CS controlled) or
2) LB=UB≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)
2. Typical value are measured at TA=25°C and not 100% tested.
Min
Typ²⁾
Max
1.5
-
3.3
-
0.3
1
0
-
-
tRC
-
-
Unit
V
µA
ns
-5-
Revision 2.0
September 2003