DS_K6F1016U4C Datasheet, PDF (3/9 Pages) Samsung semiconductor – 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1016U4C Family
CMOS SRAM
PRODUCT LIST
Part Name
K6F1016U4C-EF55
K6F1016U4C-EF70
K6F1016U4C-AF55
K6F1016U4C-AF70
Industrial Temperature Products(-40~85°C)
Function
48-TBGA(Leaded), 55ns, 3.0V
48-TBGA(Leaded), 70ns, 3.0V
48-TBGA(Lead Free), 55ns, 3.0V
48-TBGA(Lead Free), 70ns, 3.0V
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
H
H
L
H
H
L
X¹⁾
L
H
H
X¹⁾
L
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X¹⁾
L
L
H
L
X¹⁾
L
H
L
L
X¹⁾
L
L
L
1. X means don′t care. (Must be low or high state)
ABSOLUTE MAXIMUM RATINGS¹⁾
I/O1~8
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O9~16
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
Storage temperature
PD
TSTG
1.0
W
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 seconds may affect reliability.
-3-
Revision 2.0
September 2003