DS_K6F1016U4C Datasheet, PDF (2/9 Pages) Samsung semiconductor – 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1016U4C Family
CMOS SRAM
64K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 64K x16 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00(Leaded and Lead Free)
PRODUCT FAMILY
GENERAL DESCRIPTION
The K6F1016U4C families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
Product Family Operating Temperature Vcc Range
Speed
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
PKG Type
K6F1016U4C-F Industrial(-40~85°C)
2.7~3.3V
55¹⁾/70ns
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
0.5µA²⁾
2mA
48-TBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
DNU
B
I/O9
UB
A3
A4
CS
I/O1
C
I/O10 I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12 DNU
A7
I/O4
Vcc
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
Addresses
Row
select
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
64 × 16 columns
E
Vcc
I/O13 DNU
DNU
I/O5
Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16 DNU
A12
A13
WE
I/O8
H
DNU
A8
A9
A10
A11
DNU
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
48-TBGA: Top View
Name
Function
CS Chip Select Input
OE Output Enable Input
WE Write Enable Input
A0~A15 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Do Not Use
CS
OE
WE
Control Logic
UB
LB
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2-
Revision 2.0
September 2003