K8P5516UZB Datasheet, PDF (40/59 Pages) Samsung semiconductor – 256Mb B-die NOR FLASH

K8P5516UZB-P(E)/I(C)(E)/4E
Rev. 1.3
datasheet NOR FLASH MEMORY
17.0 DC CHARACTERISTICS
Parameter
Input Leakage Current
Output Leakage Current
Vcc Active Read Current ¹⁾
V_IO Non-Active Output
Active Write Current ²⁾
Program While Erase Suspend
Current
Page Read Current
ACC Accelerated Program
Current
Standby Current
Standby Current During Reset
Automatic Sleep Mode
Input Low Level
Input High Level
Voltage for Program Acceleration ⁴⁾
Voltage for Autoselect and Temporary
Sector Unprotect
Output Low Level
Output High Level
Low VCC Lock-out Voltage ⁵⁾
Symbol
ILI
ILO
ICC2
ICC5
ICC6
IACC
ISB1
ISB2
ISB3
VIL
VIH
VHH
V_ID
VOL
VOH
VLKO
Test Conditions
VIN=VSS to VCC, VCC=VCCmax
VOUT=VSS to VCC,VCC=VCCmax
CE=VIL, OE=VIH, WE=VIL
CE=VIL, OE=VIH
OE=VIH, 8-word Page Read
40MHz
CE=VIL, OE=VIH
CE, RESET, WP/ACC= Vcc± 0.3
RESET= Vss± 0.3
VIH=Vcc ± 0.3V, VIL=VSS ±0.2V
Vcc=2.7~3.6V
Vcc=2.7~3.6V
Vcc = 2.7~3.6V
Vcc = 2.7~3.6V
IOL =100uA,Vcc=VCCmin
IOH = -100uA, Vcc=VCCmin
Min
− 1.0
− 1.0
TBD
TBD
-
Typ
Max
-
+ 1.0
-
+ 1.0
TBD
TBD
25
50
Unit
μA
μA
TBD
TBD
mA
-
27
55
mA
-
10
15
mA
-
15
30
mA
-
20
40
μA
-
20
40
μA
-
20
40
μA
-0.5
-
0.8
V
V_CCx0.7
-
Vcc+0.3
V
8.5
-
9.5
V
8.5
-
9.5
V
-
-
0.1
V
Vcc - 0.2
-
-
V
2.3
-
2.5
V
NOTE :
1) The ICC current listed includes both the DC operating current and the frequency dependent component(at 5 MHz).
2) ICC active during Internal Routine(program or erase) is in progress..
3) The high voltage (VHH) must be used in the range of Vcc = 2.7V ~ 3.6V
4.)Not 100% tested.
17.1 CAPACITANCE (TA = 25 °C, VCC = 3.0V, f = 1.0MHz)
Item
Input Capacitance
Output Capacitance
Control Pin Capacitance
Symbol
Test Condition
Min
CIN
VIN=0V
-
COUT
VOUT=0V
-
CIN2
VIN=0V
-
NOTE : Capacitance is periodically sampled and not 100% tested.
Max
10
10
10
Unit
pF
pF
pF
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