K8P5516UZB Datasheet, PDF (19/59 Pages) Samsung semiconductor – 256Mb B-die NOR FLASH

K8P5516UZB-P(E)/I(C)(E)/4E
Rev. 1.3
datasheet NOR FLASH MEMORY
10.6.3 Accelerated Program Operation
Accelerated program operation reduces the program time through the ACC function. This is one of two functions provided by the WP/ACC pin. When the
WP/ACC pin is asserted as VHH, the device automatically enters the Unlock Bypass mode, and reduces the program operation time. Removing VHH from
the WP/ACC pin returns the device to normal operation.
Blocks must be unprotected before raising WP/ACC to V_HH.
Recommend that the WP/ACC pin must not be asserted at VHH except on accelerated program operation, or the device may be damaged. In
addition, the WP/ACC pin must not be in the state of floating or unconnected, otherwise the device may be led to malfunction.
Single word accelerated program operation
The system would use two-cycle program sequence (One-cycle (XXX - A0H) is for single word program command, and Next one-cycle (PA - PD) is for
program address and data ).
Accelerated Write Buffer Programming
In accelerated Write Buffer Program mode, the system must enter "Write to Buffer" and "Program Buffer to Flash" command sequence to be same as
them of normal Write Buffer Programming and only can reduce the program time. Note that the third cycle of "Write to Buffer Abort Reset" command
sequence is required in an Accelerated mode.
When the WP/ACC pin is asserted as VHH, the device automatically enters the Unlock Bypass mode, and reduces the program operation time. Removing
VHH from the WP/ACC pin returns the device to normal operation.
• Program/Erase cycling must be limited below 100cycles for optimum performance.
• Ambient temperature requirements : T_A = 30°C±10°C
• The device automatically generates adequate program pulses and ignores other command after program command
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