K8P5516UZB Datasheet, PDF (15/59 Pages) Samsung semiconductor – 256Mb B-die NOR FLASH

K8P5516UZB-P(E)/I(C)(E)/4E
Rev. 1.3
datasheet NOR FLASH MEMORY
[Table 7] K8P5516UZB Autoselect Codes
CE
OE WE
A23 -
A16
Manufacturer ID L L H
X
Read
Cycle1
L
L
H
X
Device Read
ID Cycle2
L
L
H
X
Read
Cycle3
L
L
H
X
Block Protection
Verification
L LH
BA
A15
-
A10
A8 ~
A7
A6
A5 ~
A4
A3
X XLXL
A2 A1
LL
DQ15 - DQ8
A0 _{BYTE = BYTE=}
V_IH
V_IL
L
X
X X LXLLLH
22H
DQ7 - DQ0
ECH
7EH
X X L XHHHL
22H
64H
X X L XHHHH
X X LXLLHL
22H
60H
01H : (Protected : Either DYB or
X
PPB locked)
Indicator Bit(2) L L H
X
X X L X L LHH
Master locking bit
Indicator Bit
L
L
H
BA
X
L L L LHHH
NOTE :
1) L=Logic Low=VIL, H=Logic High=VIH, VID = 8.5V to 9.5V, BA=Block Address, X=Don’t care.
Outermost block : BA255 or BA000
99H : Factory Locked, Highest
block conrolled by WP
19H : NOT Factory Locked, High-
est block conrolled by WP
X
89H : Factory Locked, Lowest
block conrolled by WP
09H : NOT Factory Locked, Low-
est block conrolled by WP
DQ7 : Factory Lock Bit
X
01H : Protected,
00H : Unprotected
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