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| K4T1G084QF-BCE6000 Datasheet, PDF (40/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM | |||
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K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
dc to VREF
region
VREF(DC)
VIL(DC)max
dc to VREF
region
tangent
line
VIL(AC)max
tIS tIH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
Hold Slew Rate
Rising Signal
=
tangent line [ VREF(DC) - VIL(DC)max ]
âTR
Hold Slew Rate
Falling Signal
=
tangent line [ VIH(DC)min - VREF(DC)]
âTF
Figure 18. IIIustration of tangent line for tIH
- 40 -
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