 English |
|
|
|
|
|
|
|
| K4T1G084QF-BCE6000 Datasheet, PDF (38/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM | |||
| |||
| ◁ |
K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
tIS
tIH
nominal
line
tIS tIH
tangent
line
VREF(DC)
VIL(DC)max
tangent
line
VIL(AC)max
nominal
line
VSS
âTF
VREF to ac
region
âTR
Setup Slew Rate= tangent line[VIH(AC)min - VREF(DC)]
Rising Signal
âTR
SFetaullpinSgleSwignRaalte=
tangent line[VREF(DC) - VIL(AC)max]
âTF
Figure 16. IIIustration of tangent line for tIS
- 38 -
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese