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| K4T1G084QF-BCE6000 Datasheet, PDF (37/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM | |||
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K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
tIS
tIH
VIH(AC)min
VREF to ac
region
VIH(DC)min
VREF(DC)
VIL(DC)max
nominal slew
rate
VIL(AC)max
tIS tIH
nominal
slew rate
VREF to ac
region
VSS
âTF
SFeatullpinSgleSwignRaalte=
VREF(DC) - VIL(AC)max
âTF
âTR
Setup Slew Rate VIH(AC)min - VREF(DC)
Rising Signal =
âTR
Figure 15. IIIustration of nominal slew rate for tIS
- 37 -
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