K4M28163LF Datasheet, PDF (4/12 Pages) Samsung semiconductor – 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M28163LF - R(B)E/N/S/C/L/R
Mobile-SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 3.6
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 3.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.0
Short circuit current
IOS
50
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)
Parameter
Symbol
Min
Typ
Max
Unit
Note
VDD
2.3
2.5
2.7
V
Supply voltage
2.3
2.5
2.7
V
VDDQ
1.65
-
2.7
V
1
Input logic high voltage
VIH
0.8 x VDDQ
-
VDDQ + 0.3
V
2
Input logic low voltage
VIL
-0.3
0
0.3
V
3
Output logic high voltage
VOH
VDDQ -0.2
-
-
V
IOH = -0.1mA
Output logic low voltage
VOL
-
-
0.2
V
IOL = 0.1mA
Input leakage current
ILI
-10
-
10
uA
4
NOTES :
1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.
Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).
2. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.
4. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 2.5V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
Min
Max
Clock
CCLK
2.0
4.0
RAS, CAS, WE, CS, CKE, DQM
CIN
2.0
4.0
Address
CADD
2.0
4.0
DQ0 ~ DQ15
COUT
3.0
6.0
Unit
pF
pF
pF
pF
Note
4
February 2004