K4M28163LF Datasheet, PDF (10/12 Pages) Samsung semiconductor – 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M28163LF - R(B)E/N/S/C/L/R
Mobile-SDRAM
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A11 ~ A10/AP _A9^*2 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function
"0" Setting for
Normal MRS
RFU^*1
W.B.L Test Mode
CAS Latency
BT
Burst Length
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8 A7
Type
A6 A5 A4 Latency A3
0 0 Mode Register Set 0 0 0 Reserved 0
Type
Sequential
A2 A1 A0
000
BT=0
1
BT=1
1
01
Reserved
001
1
1
Interleave
001
2
2
10
Reserved
010
2
Mode Select
010
4
4
11
Reserved
Write Burst Length
A9
Length
0
Burst
1
Single Bit
011
3
BA1 BA0 Mode 0 1 1
8
8
1 0 0 Reserved
1 0 0 Reserved Reserved
1 0 1 Reserved
Setting _{1 0 1 Reserved Reserved}
0 0 for Nor-
1 1 0 Reserved
mal MRS ^{1 1 0 Reserved Reserved}
1 1 1 Reserved
1 1 1 Full Page Reserved
Full Page Length x16 : 128Mb(512)
Register Programmed with Extended MRS
Address BA1 BA0 A11 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function Mode Select
RFU^*1
DS
RFU^*1
PASR
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Mode Select
Driver Strength
PASR
BA1
BA0
Mode
A6 A5 Driver Strength A2 A1 A0 Size of Refreshed Array
0
0
Normal MRS
00
Full
000
Full Array
0
1
Reserved
01
1/2
001
1/2 of Full Array
1
0
EMRS for Mobile SDRAM
10
Reserved
010
1/4 of Full Array
1
1
Reserved
11
Reserved
011
Reserved
Reserved Address
100
Reserved
A11~A10/AP
A9
A8
A7
A4
A3
101
Reserved
110
Reserved
0
0
0
0
0
0
111
Reserved
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
10
February 2004