DS_K6F8016U6B Datasheet, PDF (4/9 Pages) Samsung semiconductor – 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: VCC+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Min
2.7
0
2.2
-0.3³⁾
Typ
Max
Unit
3.0
3.3
V
0
0
V
-
Vcc+0.3²⁾
V
-
0.6
V
CAPACITANCE¹⁾ (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTIC
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
Min Typ¹⁾ Max Unit
ILI VIN=Vss to Vcc
-1
-
1
µA
ILO ^{CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or}
LB=UB=VIH, VIO=Vss to Vcc
-1
-
1
µA
Cycle time=1µs, 100%duty, IIO=0mA, CS1≤0.2V,
ICC1 LB≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or
-
-
2 mA
VIN≥VCC-0.2V
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,
CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
55ns
-
-
-
22
mA
-
28
VOL IOL = 2.1mA
VOH IOH = -1.0mA
Other input =0~Vcc
ISB1 1) CS1≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
-
-
0.4
V
2.4
-
-
V
-
0.5 15 µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
4
Revision 1.0
September 2001