DS_K6F8016U6B Datasheet, PDF (2/9 Pages) Samsung semiconductor – 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6B Family
CMOS SRAM
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F8016U6B families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F8016U6B-F
Industrial(-40~85°C)
2.7~3.3V
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested
Speed
55¹⁾/70ns
Power Dissipation
Standby
(ISB1, Typ.)
0.5µA²⁾
Operating
(ICC1, Max)
2mA
PKG Type
48-TBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CS2
B
I/O9
UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6
I/O2
I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Vcc
Vss
Memory array
1024 rows
512×16 columns
D
Vss
I/O12
A17
A7
I/O4
Vcc
E
Vcc
I/O13
Vss
A16
I/O5
Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16 DNU
A12
A13
WE
I/O8
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
H
A18
A8
A9
A10
A11
DNU
48 ball TBGA - Top View(Ball Down)
Name
Function
CS1, CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A18 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Function
Vcc Power
Vss Ground
UB Upper Byte(I/O9~16)
LB Lower Byte(I/O1~8)
DNU Do Not Use
CS1
CS2
OE
WE
Control Logic
UB
LB
I/O Circuit
Column select
Column Addresses
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
September 2001