K8P5616UZB Datasheet, PDF (36/60 Pages) Samsung semiconductor – 256Mb B-die Page NOR FLASH

K8P5616UZB
Rev. 1.0
datasheet NOR FLASH MEMORY
DQ5 : Exceed Timing Limits
If the Internal Program/Erase Routine extends beyond the timing limits, DQ5 will go High, indicating program/erase failure.
DQ3 : Block Erase Timer
The status of the multi-block erase operation can be detected via the DQ3 pin. DQ3 will go High if 50μs of the block erase time window expires. In this
case, the Internal Erase Routine will initiate the erase operation.Therefore, the device will not accept further write commands until the erase operation is
completed. DQ3 is Low if the block erase time window is not expired. Within the block erase time window, an additional block erase command (30H) can
be accepted. To confirm that the block erase command has been accepted, the software may check the status of DQ3 following each block erase com-
mand.
DQ2 : Toggle Bit 2
The device generates a toggling pulse in DQ2 only if an Internal Erase Routine or an Erase/Program Suspend is in progress. When the device executes
the Internal Erase Routine, DQ2 toggles only if an erasing bank is read. Although the Internal Erase Routine is in the Exceeded Time Limits, DQ2 toggles
only if an erasing block in the Exceeded Time Limits is read. When the device is in the Erase/Program Suspend mode, DQ2 toggles only if an address in
the erasing or programming block is read. If a non-erasing or non-programmed block address is read during the Erase/Program Suspend mode, then
DQ2 will produce valid data. DQ2 will go High if the user tries to program a non-erase suspend block while the device is in the Erase Suspend mode.
DQ1 : Buffer Program Abort Indicator
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a "1". The system must issue the Write-to-Buf-
fer-Abort-Reset command sequence to return the device to reading array data.
RY/BY : Ready/Busy
The pin is an open drain output, allowing two or more Ready/ Busy outputs to be OR-tied. An appropriate pull-up resistor by system is required for proper
operation.
The K8P5616UZB has a Ready / Busy output that indicates either the completion of an operation or the status of Internal Algorithms. If the output is Low,
the device is busy with either a program or an erase operation. If the output is High, the device is ready to accept any read/write or erase operation. When
the RY/ BY pin is low, the device will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the
K8P5616UZB is placed in an Erase Suspend mode, the RY/ BY output will be High. For programming, the RY/ BY is valid (RY/ BY = 0) after the rising
edge of the fourth WE pulse in the four write pulse sequence. For Chip Erase, RY/ BY is also valid after the rising edge of WE pulse in the six write pulse
sequence. For Block Erase, RY/ BY is also valid after the rising edge of the sixth WE pulse.
Rp
VCC
Ready / Busy
open drain output
Vcc (Max.) - VOL (Max.)
Rp =
IOL + Σ IL
=
3.5 V
2.1mA + Σ IL
where Σ IL is the sum of the input currents of all devices tied to the
Ready / Busy pin.
GND
Device
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