K9K4G08U1M Datasheet, PDF (30/40 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

K9K4G08U1M
K9F2G08U0M K9F2G16U0M
Read ID Operation
Preliminary
FLASH MEMORY
CLE
CE
WE
tAR
ALE
RE
I/Ox
tREA
90h
00h
ECh
Device
Code*
80h
Read ID Command
Address. 1cycle
Maker Code Device Code
Device
K9F2G08U0M
K9F2G16U0M
Device Code*(2nd Cycle)
DAh
CAh
4th Cycle*
15h
55h
4th cyc.*
ID Definition Table
90 ID : Access command = 90H
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
Description
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
30